The devices can be defined in cross-structures at a singular section or in 1^st or 2^nd level of device structure in an offtake.

In a structure, several devices can be set in parallel.

Several type of devices can be combined in a same structure. For each of them, SIC proposes a choice of discharge equations (see below):

• Rectangular sill (CEM 88 (D), FreeFlow, CUN 80, CEM 88 (V));
• Rectangular gate(CEM 88 (V), Submerged, CUN 80, CEM 88 (D));
• Circular gate (CEM 88 (V), Submerged, CUN 80, CEM 88 (D));
• GEC-Alsthom auto-regulated gates: AMIL, AVIO-AVIS et MIXTES (GOU 93, CEM 02 (V));
• Trapezoidal sill (CEM 02 (V), CEM 02 (D));
• Trapezoidal gate (CEM 02 (V), CEM 02 (D));
• Pipe
• APM